| Summary: | 碩士 === 國立清華大學 === 化學系 === 101 === We present in-situ transport measurement of rubrene thin film transistors. The rubrene based transistors were fabricated form rubrene grown onto the SiO2/Si substrate modified by Cadmium arachidate (CdA) multi-layers or self-assembled organosilane. The morphology, structure and crystallinity of CdA substrate and rubrene film were characterized by optical microscope, atomic force microscopy (AFM), near-edge absorption fine structure (NEXAFS), x-ray diffraction (XRD).
Rubrene film grown on the substrate modified by aromatic terminated silane, the film shows the irregular pillar-like morphology and amorphous structure. Rrubrene film on multi-layers CdA substrate present more plate-like features and reveal the strong (200)-oriented crystallites on the surface. In addition, the ring plane of the aromatic core of rubrene molecule is stand-up configuration from thin to thick thickness of rubrene films.
The transistor was fabricated form rubrene grown on 4 layers CdA film on SiO2/Si substrate modified by alkyl terminated silane have the characteristic of field effect transistor form 35 nm thickness of rubrene, and the hole mobility is 4.58 × 10-4 cm2/Vs. The hole mobility is increased after increasing the thickness of rubrene film. The highest mobility of 0.16 cm2/Vs was obtained when the rubrene film thickness reached to 140 nm. The final mobility was improved to 0.32 cm2/Vs, after the rubrene film was treated by post thermal annealing.
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