Studies of Photonic Properties in Semiconductor-Dielectric Photonic Crystals

• Main Authors: CHIU HUNG-CHIN, 邱鴻錦
• Other Authors: Wu C. J.
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/78222558468345010961

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 101 === This dissertation is theoretically devoted to the studies of photonic properties in the semiconductor-dielectric photonic crystal (SDPC) containing a doped semiconductor. The theoretical simulation results obtained by transfer-matrix method (TMM) are to show the transmittance in GaAs-based photonic crystal structure. In SDPC, the permittivity of semiconductor is strongly dependent on temperature, pressure, and density of free carrier. These dependences can cause the permittivity to be either positive or negative at a certain frequency range. The first topic is to study pressure, temperature and plasma frequency effects on the band structure of 1D semiconductor photonic crystal made of alternating layers of air and GaAs. The second topic is to study the negative permittivity in 1D finite semiconductor photonic crystal made of alternating layers of air and GaAs with N being the number of periods. It is found the number of channels in the pass band of photonic crystal is equal to N-1. The third topic is to study the properties of photonic band gaps in Si/SiO2 photonic crystals and the photonic defect modes in the Si/SiO2 photonic structures with GaAs defects. It is found that there are multiple transmission peaks within the photonic band gap (PBG) as the defects.