The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 101 === Bismuth telluride-based compound is currently widely used in thermoelectric material due to its excellent thermoelectric performance around room temperature. By doping different elements, P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 can be made. The thermoe...
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ndltd-TW-101NTU051591642015-10-13T23:10:17Z http://ndltd.ncl.edu.tw/handle/59740961341050255036 The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering 利用射頻磁控濺鍍法製備P-type Bi0.5Sb1.5Te3 和N-type Bi2Te2.7Se0.3熱電薄膜於PI軟性基板之熱電性質研究 Kai-Fu Chang 張凱富 碩士 國立臺灣大學 材料科學與工程學研究所 101 Bismuth telluride-based compound is currently widely used in thermoelectric material due to its excellent thermoelectric performance around room temperature. By doping different elements, P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 can be made. The thermoelectric thin films of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 on polyimide substrates are prepared by radio-frequency (RF) magnetron sputtering. The Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 thin films are deposited with different substrate temperature, work pressure and RF power by radio-frequency (RF) magnetron sputtering. Finally, this research analyses the themoeleletric performance, crystal structure and composition by XRD, XPS, Hall effect and the Seebeck effect. This research discovers that the P-type Bi0.5Sb1.5Te3 thermoelectric thin films show the best thermoelectric properties at room temperature with 18 Watts of RF working pressure under 5 mTorrs after electrical annealing treatment at 270 degrees Celsius for 5 minutes;The Seebeck coefficient is 220.5 μV/K, the lowest electrical resistivity is 5 mΩ∙cm, and the highest power factor is 9.59 μW/K2cm. N-type Bi2Te2.7Se0.3 thermoelectric thin films show the best thermoelectric properties at room temperature with 15 Watts of RF, working pressure under 5 mTorrs after electrical annealing treatment at 270 degrees Celsius for 5 minutes and the Seebeck coefficient is 177.65 μV/K,the lowest electrical resistivity is 3.264x10-2 Ω∙cm and the highest power factor is 4.158 μW/K2cm. 林新智 2013 學位論文 ; thesis 146 zh-TW |
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碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 101 === Bismuth telluride-based compound is currently widely used in thermoelectric material due to its excellent thermoelectric performance around room temperature. By doping different elements, P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 can be made. The thermoelectric thin films of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 on polyimide substrates are prepared by radio-frequency (RF) magnetron sputtering. The Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 thin films are deposited with different substrate temperature, work pressure and RF power by radio-frequency (RF) magnetron sputtering. Finally, this research analyses the themoeleletric performance, crystal structure and composition by XRD, XPS, Hall effect and the Seebeck effect.
This research discovers that the P-type Bi0.5Sb1.5Te3 thermoelectric thin films show the best thermoelectric properties at room temperature with 18 Watts of RF working pressure under 5 mTorrs after electrical annealing treatment at 270 degrees Celsius for 5 minutes;The Seebeck coefficient is 220.5 μV/K, the lowest electrical resistivity is 5 mΩ∙cm, and the highest power factor is 9.59 μW/K2cm.
N-type Bi2Te2.7Se0.3 thermoelectric thin films show the best thermoelectric properties at room temperature with 15 Watts of RF, working pressure under 5 mTorrs after electrical annealing treatment at 270 degrees Celsius for 5 minutes and the Seebeck coefficient is 177.65 μV/K,the lowest electrical resistivity is 3.264x10-2 Ω∙cm and the highest power factor is 4.158 μW/K2cm.
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author2 |
林新智 |
author_facet |
林新智 Kai-Fu Chang 張凱富 |
author |
Kai-Fu Chang 張凱富 |
spellingShingle |
Kai-Fu Chang 張凱富 The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering |
author_sort |
Kai-Fu Chang |
title |
The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering |
title_short |
The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering |
title_full |
The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering |
title_fullStr |
The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering |
title_full_unstemmed |
The Study of P-type Bi0.5Sb1.5Te3 and N-type Bi2Te2.7Se0.3 Thermoelectric Thin Films on PI Substrate by RF Magnetron Sputtering |
title_sort |
study of p-type bi0.5sb1.5te3 and n-type bi2te2.7se0.3 thermoelectric thin films on pi substrate by rf magnetron sputtering |
publishDate |
2013 |
url |
http://ndltd.ncl.edu.tw/handle/59740961341050255036 |
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