| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 101 === As “Moore’s law” rapidly shrinks the feature size of Si electronic devices to their ultimate physical limits, there has been a concerted effort to broaden the functionalities of Si-based technology beyond electronics. Indeed, Si has been increasingly investigated as a platform for the monolithic integration of photonic devices with high-speed Si electronics [1]. The progress, however, has been hindered by the fact that Si as an indirect bandgap material cannot be used to make efficient light sources. Attention has been directed towards the other group-IV semiconductor, Ge, as a candidate for the monolithic light source. In this work, there are two topic which are light emitting diode and photodetector. First, work on Ge1-xSnx represents a step forward towards the goal of an efficient direct-bandgap GeSn light-emitting device on a Si substrate by incorporating higher Sn content of 7.8% in a diode structure that operates at lower current densities. Second, a Ge photodetector has a detection limit at 1550 nm, we add Sn to Ge in order to extend the detection range and then compare the difference and performance of Ge and Ge1-xSnx photodetector.
|
|---|
