| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 101 === First, A new wide locking range series-tuned divide-by-3 injection-locked frequency divider (ILFD) using a standard 0.18 μm CMOS process is presented. The ÷3 ILFD circuit is realized with a series-tuned cross-coupled n-core MOS LC-tank oscillator. Two direct-injection MOSFETs in series are used as a frequency doubler and a dynamic linear mixer to widen the locking range. The core power consumption of the ILFD core is 10.56 mW. The divider’s free-running frequency is tunable from 3.529 GHz to 3.828 GHz by tuning the varactor’s control bias, and at the incident power of 0 dBm the maximum locking range is 2.3 GHz (21.6%), from the incident frequency 9.5 GHz to 11.8 GHz. The operation range is 2.5GHz (23.7%), from 9.3GHz to 11.8 GHz.
Second, investigates the hot carrier effects on the RF characteristics of a series-tuned divide-by-3 injection-locked frequency divider (ILFD). The ÷3 ILFD was implemented in the TSMC 0.18 μm CMOS process. High supply voltage was applied to excite high RF voltage stress on the ILFD. ILFD-core current and power consumptions decrease with stress time, this was attributed to the transconductance degradation of cross-coupled n-core MOS. The locking range degradation is caused by the transconductance degradation of injection MOSFETs and low ILFD voltage swing.
Finally, introduce the Hot carrier (HC) effect on a divide-by-2/-4 injection-locked frequency divider (ILFD). The ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process. The ILFD uses one direct injection MOSFETs for coupling external signal to the LC resonator. It is shown that the divide-by-2/-4 locking range decreases and the oscillation frequency increases with stress time, and the phase noise in both the free-running and locked state increases with stress time.
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