Mechanism and Improvement of Breakdown Degradation Induced by Interface Charge in UHV Device with P-Top Engineering
碩士 === 亞洲大學 === 資訊工程學系碩士班 === 101 === In this thesis, describes an innovative p-top engineering to simulate and optimize the breakdown degradations in different regions of the interdigitated layout such as source center (SC), drain center (DC), and flat region of an Ultra high voltage (UHV 800V) dev...
Main Author: | MD Imran Siddiqui |
---|---|
Other Authors: | Gene Sheu |
Format: | Others |
Language: | en_US |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/88820507012314585144 |
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