Control of Molybdenum Sputtering Targets and their Thin Film Characteristics

• Main Authors: Bing-Hua Tsai, 蔡秉樺
• Other Authors: Jhewn-Kuang Chen
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/w4vxvt

碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 101 === In this study, we aim to understand the microstructure of molybdenum sputtering targets and to analyze their thin film characteristics for TFT-LCD buffer layer. The results show that the density of molybdenum ingot raise from 95.47% to 99.47% and 99.51% after 70% and 85% hot rolling, respectively. 1000oC and 1100oC annealing allows 85% rolling plates to start recrystallize earlier than 70% rolled plate.1200oC annealing for 1 hrs is required for both plates to finish recrystallization. The origin molybdenum ingot shows random distribution texture while the as-rolled plates show the texture of {001}<101>+{111}<101>, with intensity increasing with increasing rolling degree. The 70% rolling plate is more dominated by {001}<101> texture, while the 85% rolling plate is dominated by {111}<101> texture, suggesting that we may control the texture formation through the rolling schedules. Although the as-rolled molybdenum target demonstrates a higher sputtering rate than as-annealed molybdenum target, the as-rolled molybdenum target also has more unstable structures, particles are often observed on the thin film surface. The electrical resistivity of thin film sputtered by the as-rolled and as-annealed targets can achieve 1.21×10-4Ω-cm and 1.4×10-4Ω-cm, respectively. The electrical resistivity of thin films drop after annealing at 300oC to 7.19×10-5Ω-cm and 9.71×10-5Ω-cm; and after 500oC annealing, the electrical resistivity further reduce to 3.75×10-5Ω-cm and 6.64×10-5Ω-cm for as-rolled and as-annealed sputtering targets. It is concluded that uniformly distributed fine and stable grain structures are preferable for sputtering targets to generate thin films with lower electrical resistivity and sputtering yields in the same time.