| Summary: | 碩士 === 國立臺北科技大學 === 材料及資源工程系研究所 === 101 === In the present study, we demonstrate the facile and green synthesis of nitrogen and phosphorus doped graphite films by using simple chemical solution method. We successfully doped nitrogen and phosphorus onto the graphite film by doping with ammonium hydroxide and phosphoric acid respectively. For a typical synthesis of composite, we used the silicon wafer as a substrate then it was oxidized to form silicon dioxide layer, and carbon thin film was deposited onto sample. Then it was immersed into the ammonium hydroxide and phosphoric acid solution followed by heated at 100℃ for various dwelling time. After the immersion the copper was deposited onto the obtained sample by using sputtering method; here copper is acting as a cap layer between the carbon layers for inhibiting the loss of doped material during the heat treatment process. Finally the product was annealed at 600℃, 700℃, 800℃ respectively, which leads to the formation of graphitic film. It should be noted that here we used copper as a control for the formation of graphite. The surface morphology of the composite was characterized by using optical microscope, which revealing that graphitic layers are formed as the combination of multiple graphene layers via Van der Waals interactions between individual graphite layers.
Raman spectroscopy has been used to determine the properties of graphitic layers and the disorder of graphitic structure after graphitization. The synthesized composite films have been confirmed XRD. Further, the nitrogen and phosphorus doped graphite films have shown to improved sheet resistance and carrier concentration, implying the nitrogen and phosphorus leads to the enhanced and synergetic activity onto the graphitic film rather than intrinsic graphite. Finally, the versatile route of composite preparation could be a promising route for other composite materials preparation in near future.
|
|---|
