| Summary: | 碩士 === 大同大學 === 光電工程研究所 === 101 === This thesis has four main parts, the first to use the DC sputtering machine reminders growth on Si substrateOf the metal film, and then using thermal chemical vapor deposition growth of carbon nanotubes, the first history of using hydrogen as a pre-processing granulated iron thin films, and then pass into acetylene gas CNTs, with the control of experimental parameters, we can alter the morphology and quality of carbon nanotubes, and also with the CNT field emission properties and morphology changes in quality varies. In the framework of two-pole, anode and cathode gap of about 275 μm, in 1.17 V / μm field strength available under the current density of 0.45 mA/cm2
Purpose is to want to grow CNTs at three-pole field emission element, yellow room by spin coating, exposure, development and other steps to define an array of holes, and then successfully removed by plasma processing system molybdenum layer, with the help of wet etching silicon dioxide layer and selectively removing the silicon substrate depth of holes, and then Mo/SiO2/Si structure of the three-pole array of holes inside CNTs.
|
|---|
