Growth and Characterization of Transparent Conductive Oxide ZnSnO Thin Films

• Main Authors: Ruei-Hung Kao, 高瑞鴻
• Other Authors: Chu-Shou Yang
• Format: Others
• Language: en_US
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/31834541829439541488

碩士 === 大同大學 === 光電工程研究所 === 101 === ZnSnO (ZTO) thin films were grown on sapphire by using plasma-assisted molecular beam epitaxy. The tin concentration was controlled by varying tin cell temperature. When tin content reaches to 5 at.%, the structure of ZnSnO thin films is transferred from crystalline to amorphous, which is determined by X-ray diffraction (XRD). The lattice constant in c-axis of ZnO:Sn films linearly increases with TSn increased, which implied the valence electron number of tin is +2. Based on absorption spectra result, the principal structure of ZTO is respectively on ZnO in crystalline region (denoted as c-ZTO) and SnO2 in amorphous region (a-ZTO). There is the lowest resistivity (7.09 × 10-4 ohm-cm) and the highest mobility (18.9 cm2/V-s) in a-ZTO as tin content reached 32.3%. In addition, the mobility of a-ZTO is enhanced by decreasing growth temperature. The SnO2-based ZTO (32.3% Sn content) grown on 600℃ substrate temperature has the highest mobility as 23 cm2/V-s.