Process Development of Surface Light-Trapping Structures for Crystalline-Si Solar Cells

• Main Authors: Wei-Jhe Yang, 楊維哲
• Other Authors: Jian-Yang Lin
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/88176648995620621782

碩士 === 國立雲林科技大學 === 電子與光電工程研究所碩士班 === 101 === The purpose of this work is to improve the photovoltaic conversion efficiency of the single-crystalline silicon (sc-Si) solar cells with the anti-reflection coatings (ARCs). In this work, TiO2 nanotube (TNT) structure by anodic oxidation and combination of spin-on-glass (SOG) and SiO2 micro-sphere texturing (MST) have been used as the ARCs for the cells. With the combination of 1 贡m SiO2 micro spheres and SOG layer, the surface reflectance can be reduced as low as 4.09%. In this work, the sc-Si solar cell without ARC has open-circuit voltage (Voc) of 0.46 V, short-circuit current density (Jsc) of 31.4 mA/cm2, fill factor (FF) of 53.27%, conversion efficiency (η) of 7.86%. The sc-Si solar cell with TNT ARC has Voc of 0.51 V, Jsc of 30.9 mA/cm2, FF of 61.92%, η of 9.8% with a relative improvement of 25.64% on the conversion efficiency as compared to the cell without ARC. Furthermore, the sc-Si solar cell with SOG and SiO2 MST ARCs has Voc of 0.49 V, Jsc of 37 mA/cm2, FF of 53.75%, η of 9.92% with a relative improvement of 27% on the conversion efficiency as compared to the cell without ARC.