Conversion Efficiency Enhancement of InGaN/GaN MQW Solar Cells with Band Profile Modulation
碩士 === 元智大學 === 光電工程學系 === 101 === The influence of band structure and indium composition of stepping layer are numerically investigated on the photovoltaic characteristics of InGaN/GaN MQW solar cell. In this study, the barrier structure and indium composition of inserting step layer leads to a subs...
Main Authors: | Chi-Chang Hsieh, 謝奇璋 |
---|---|
Other Authors: | Fang-I Lai |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/82428508563192381050 |
Similar Items
-
Study on GaN/InGaN MQW Solar Cell by simulation
by: kai-yan Zhang, et al.
Published: (2009) -
Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells
by: Bilel Chouchen, et al.
Published: (2019-04-01) -
The study of AlInGaN MSM photodetectors and InGaN/GaN MQW optical devices
by: Ho-Chien Chen, et al.
Published: (2006) -
Improvement of the Characteristics of InGaN/GaN MQW LED with Current Blocking Layer
by: Chia-Hung Tsai, et al.
Published: (2005) -
Improvement of InGaN/GaN MQW LEDs grown by Low Pressure Organic-metal Vapor Phase Epitaxy
by: Chi-Ling Lee, et al.
Published: (2007)