| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 102 === Periodic Si nanorod (NR) arrays were fabricated by nanosphere lithography as described in the previous work.1 Self-assembled monolayer of PS sphere was first prepared on Si substrate. Subsequently, plasma etcher was used to reduce the diameter of the PS sphere. Si NRs arrays were etched obtained by metal-assisted chemical etching method, using mixed HF and H2O2 solution. The lengths of Si NRs can be controlled from few to tens micrometer by different etching times. The periodic Si NR arrays exhibit the hydrophobic property, which are used to selectively deposit the ZnO seeds on the top of the Si NRs by dropping the Zn(NO3)2 solution on Si NR arrays. Then, n-ZnO NRs/p-Si NR arrays heterostructure was achieved by the hydrothermal growth of ZnO NRs on the top of seeded Si NRs, the results showed the ZnO NRs grown uniformly on the Si NRs. The proposed nano-heterostructures have advantages in low equipment requirements, low material waste and mass production. Compared to n-ZnO NRs/p-Si substrate heterostructures, the electrical characteristics and photorespones exhibit lower current leakage and higher sensitivity to UV light, respectively.
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