| Summary: | 碩士 === 中州科技大學 === 機械與自動化工程系 === 102 === The study uses Hydrothermal Method to grow aluminum-doped zinc oxide nanorods on 4 kinds of substrates which are SiO2/Si, Si, Glass and ITO Glass.First, taking Zinc Acetate with 0.0075 M to rotate and dope on different substrate. Second, the Si substrate was submerged horizontally in zinc nitrate hexahydrate (Zn(NO3)2•6H2O), diethylenetriamine (DETA), and doped the solution of aluminum nitrate, nonahydrate (Al(NO3)3•9H2O) with concentration 1%, 2% and 3% on 120 degrees for 4 hrs.The size and the appearance of nanorod were observed by Field Emission Scanning Electron Microscopy, FE-SEM.
Moreover, the nanorods were grown on different substrates to form four different structures and extend to link MOSFET(IC-CD4007) and Form Extended Gate Field Effect Transistor, EGFET. Analyzing the different concentrations by Keithley 4200 is to know the characteristic.
The experimental result found that the AZO nanorods with 12 times pretreatment are smaller. The better pH sensing trend is the AZO nanorods with 6 layers when measuring. And they reach to 73.96mV/pH.
Additionally, we can clearly see the mix of aluminum and the distribution of Sin and aluminum. The oxide nanorods with six times’ pretreatment contained oxygen of 20.56% weight, Sin of 78.66% weight, and aluminum of 0.78% weight.
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