The Design of S-Band GaN Low Noise Amplifier and Dual-Band Band-Pass filter

• Main Authors: Shou Ming Liu, 劉守銘
• Other Authors: H. C. Chiu
• Format: Others
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/39546838465702860955

碩士 === 長庚大學 === 電子工程學系 === 102 === In this thesis we are going to develop two blocks LNA ( Low noise Amplifier) and dual-band band-pass filter, which are utilized in receiving-end of RF transceiver. For the LNA part, we design and fabricate a LNA with 0.5um GaN HEMT process, which is set to operate at 2.4GHz S-band. The architec-ture of this circuit is two-stage transistors cascade. At the first stage, we reduce the input noise by Source Degeneration Inductor. By cascading a common - source amplifier at second stage to increase the output gain. Simulate by using Agilent ADS software at the period of circuit design. Measure and record all the related parameters when the chip come out. Compare all the results between simulation and measurement, all the data and curves are close to the expectation. For the filter part, by using a stepped impedance resonator and adjusting the ratio of its impedance we implement a dual-band band-pass filter on FR4 PCB. The first band- pass frequency of the filter is setting at 2.4GHz, and the second is 5.2GHz.