The study of Cu2O：Zn by CBD

• Main Authors: Chien-Lin Yeh, 葉建麟
• Other Authors: Shan-Ming Lan
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/10548347407581031505

碩士 === 中原大學 === 電子工程研究所 === 102 === In this study, the Cu2O thin films were deposited by chemical bath deposition. The substrate of thin films were used by copper substrates that were the purity of 99.96 %. The solution deploy CuSO4 and ZnSO4. The thin films of Cu2O:Zn were doping different concentration by changing ZnSO4 dosage. The range that is molality ratio of ZnSO4 to CuSO4 is (0:1) to (0.7:1). According to the Hot probe experiment, the Cu2O thin films were N-type. The SIMS results showed that the thickness of Cu2O thin films were about 2m. After n-Cu2O doping, the resistivity can be reduced to 49Ω-cm from 75Ω-cm. According to the XRD results, Cu2O kept the texture of prominent (111) plane. Furthermore, a large amount of grains with size of about 0.5~2m were found. Low temperature PL measurement showed a significant result of two broad peak from 716nm(1.73eV) and 650nm(1.93eV). Those were Vo++ and caused by Zn doping.