| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 102 === Abstract
Chlorine (Cl)-doped cuprous oxide (Cu2O:Cl) thin films were fabricated on copper (Cu) substrate by chemical bath deposition (CBD) method. The Cu2O:Cl films were prepared using copper sulfate (CuSO4) solution with the addition of copper chloride (NaCl) as Cl- source. The molar ratio of NaCl to CuSO4 ([NaCl]/[CuSO4]) was varied from 0 to 2.60. Resultantly, hot point probe measurements demonstrated n-type conductivity for all the Cu2O films produced by CBD. X-ray diffraction patterns show that the as-grown Cu2O:Cl films have a sphalerite structure with a dominant plane orientation of Cu2O(111). Moreover, low temperature photoluminescence (PL) measurements conducted at 5 K demonstrated an emission band at 1.89 eV related to Cl doping besides that at 1.72 eV attributed to doubly ionized oxygen vacancies. It was found that the Cl-related PL emission was intensified with increasing the amount of Cl involved. But X-ray photoelectron spectroscopy not confirmed the incorporation of Cl into the lattice of Cu2O. Conclusively, n-type Cu2O:Cl films with the resistivity ranging from 40 – 50 -cm can be produced on Cu substrate by CBD method. Especially, the lowest resistence of the film is about 48Ω-cm under the ([NaCl]/[CuSO4]) ratio equal to1.428. The doped part, chlorine can be successfully incorporation into cuprous oxide, and replace the oxygen atom to the N-type electrically.
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