Characterization of Data Retention Capability in NOI NVM array and Single NOI cell

• Main Authors: Wei-Chen Lin, 林瑋宸
• Other Authors: Erik S. Jeng
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/r2h4gj

碩士 === 中原大學 === 電子工程研究所 === 102 === In recent years, the rapid development of communications-related products and growth of portable productions increase the demand on non-volatile memory devices. In order to the meet the density and portability of portable productions, the feature size of non-volatile memory devices needs to shrink continuously. Moreover, the relevant performance index such as power consumption and speed must be also improved. We have investigated the data retention correlation between the non-overlapped implantation non-volatile memory (NOI NVM) and 1M bits NOI NOR-type array in terms of their threshold voltage distribution before and after baking. We characterized their Vth distribution in the single device and NOI array under the same operating conditions. The Vth distribution broadens in the array during the baking test. This effect will decrease the read out window in the NOI array and results in low product yield. In this study, we have verified the consistency and characteristics of Vth in a single NOI device and its array under high temperature stress.