| Summary: | 碩士 === 逢甲大學 === 資訊電機工程碩士在職專班 === 102 === According to the back contact layer process of CIGS thin-film solar cell, this experiment focuses on coherence contact status of the Molybdenum layer with glass/ CIGS layer. The condition of Moly thickness fixed at 300nm by three kinds of sputtering conditions. Afterward using the 1064 wavelength laser scribes the sputtered Molybdenum laser. The purpose of scribing process mainly increases the amounts of cell. The related high voltage/ current can cause the maximum power by increase the cell number. Base on the characteristic of Moly film, sputtering with the high flow Argon process air can cause a good coherence contact with glass substrate. On the other hand, the low flow Argon can let the Moly has fine contact with CIGS layer[1]. Considering the cost of actual production, the experiment can reach the good contact both side with glass and CIGS layer, and also the result of 49µm line width and 2MΩ isolated resistance by used the 30 sccm low flow Argon together with 13W IR laser isolation scribing process.
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