| Summary: | 碩士 === 崑山科技大學 === 材料工程研究所 === 102 === In this research, the AlN thin films were deposited on Sapphire substrate by chemical vapor deposition method. The dependence between substrate temperatures and times were investigated by X-Ray diffraction (XRD), and scanning electron microscopy (SEM). As the substrate temperature increasing, the grow rate of AlN films increase, and the circle grain become long strip. Finally, controlling the deposited times at different substrate temperature, the thickness error of AlN films is limited within 6 %.
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