| Summary: | 碩士 === 國立高雄應用科技大學 === 化學工程與材料工程系碩士在職專班 === 102 === In this study, we use the inverted structure with spin coating and blade coating at atmospheric environment to make the Polymer Light Emitting Diode (PLED) device. NaBH4 was used to modify ITO substrate, as it is in appropriate condition (such as in appropriate annealing treatments, and in appropriate solvents, etc.), NaBH4 also be used as the electron injection material, which could reduce the electron injection barrier. Ag paste was used as an anode material, when Ag paste blends with some surfactants (such as diethylene glycol butyl ether ) could effectively promote the hole injection ability. Finally, PEDOT:PSS was also used as a hole transporting layer material. The device experiments show the light-emitting voltage reduced from 31.5V to 8.5V. Also, when Cu paste was used we had found the light-emitting voltage is about 12.5V.
NaBH4 was dissolved in dimethoxyethanol to modified ITO substrate. The X-RAY diagram shows that both sodium (Na) and boron (B) could probably precipitated onto the ITO surface. As NaBH4 had finished the annealing treatments with temperature during 130℃~160℃. The precipitated crystal on NaBH4 film could also be observed by polarization microscope.
High density of crystalline particles and uniformity is good at annealing 140℃. When the annealing temperature was raised above 150℃, the precipitated crystals could be enclosed by some unknown substance. Transmittance and conductivity of electron injection decrease when annealing temperature is higher then 150℃.
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