Cu2ZnSnS4 Absorber Layer of Thin Film Solar Cell Prepared by Pulse DC Magnetron Sputtering
碩士 === 明志科技大學 === 材料工程系碩士班 === 103 === Cu2ZnSnS4 (CZTS) absorber layer for thin film solar cell were fabricated by pulsed DC magnetron sputtering using a CZTS single target. The magnetron sputtering rate was measured and calculated byα-step. The CZTS phases were observed by X-ray diffraction (XRD)....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32v2v6 |
| Summary: | 碩士 === 明志科技大學 === 材料工程系碩士班 === 103 === Cu2ZnSnS4 (CZTS) absorber layer for thin film solar cell were fabricated by pulsed DC magnetron sputtering using a CZTS single target. The magnetron sputtering rate was measured and calculated byα-step. The CZTS phases were observed by X-ray diffraction (XRD). It was found that the crystallinity of CZTS increases with increasing annealing temperature. The same results were observed by Raman spectroscope. The relatively high crystallinity when the working pressure of Mo process was kept at 10 mtorr. The energy band gap was measured by UV-Vis spectroscopy. The band gap of CZTS was close to 1.45 eV at high annealing temperature. The surface topography was observed by Field-Emission Scanning Electron Microscope (FE-SEM). The grain size of CZTS was large as annealing temperature increased to 450 ℃. The resistivity and type of semiconductor were measured by Hall measurement. Resistivity of CZTS was low which is due to evaporation of volatile Sn and S atoms under annealing, which is confirmed by X-ray photoelectron spectrometer (XPS).
Furthermore, the lack of Sn and S atoms can be solved by co-sputtering using a SnS target. But doping with SnS shows SnS secondary phase in the X-ray diffraction pattern.
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