| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 102 === Since scanning probe microscopy (SPM) has variety of measurements and high resolution, it has been used to investigate CuIn1-xGaxSe2 (CIGS) solar cells for in the recent years. With typical characterization method and SPM, We realized the property of CIGS in depth. In this study, we employed secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and scanning Kelvin probe microscopy (SKPM) to investigate the properties of CIGS an optical absorption layer grown by a three-stage co-evaporation process. SIMS and XPS provides the elemental depth profiles in CIGS materials. Using SKPM, one can obtain surface potential distribution of CISG materials. The relation between the energy gaps and the built-in electric field in a CIGS thin film was observed by the surface potential variations, for gualitatively estimating the short-circuit current (Jsc) of a CIGS solar cell. Using the external white-light illumination, SKPM also observed the influence of built- in electric field on carrier moving.
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