Photocurrent distribution of GaN/InGaN light-emitting diodes on patterned sapphire substrates under local illumination
碩士 === 國立中興大學 === 奈米科學研究所 === 102 === We investigated the photocurrent distribution of GaN/InGaN light-emitting diodes (LEDs) on patterned sapphire substrates by the scanning near-field microscope (SNOM). The GaN/InGaN LEDs were grown on dot-array patterned sapphire substrates. The peaks of electro...
Main Authors: | Hsin-Mao Lin, 林鑫茂 |
---|---|
Other Authors: | 孫允武 |
Format: | Others |
Language: | zh-TW |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/00271601751274768405 |
Similar Items
-
Investigation and comparison of the characteristics for InGaN-based light-emitting diodes grown on GaN substrate and sapphire-based substrates.
by: Kang, Yu-Ting, et al.
Published: (2012) -
The Study on InGaN/GaN Light Emitting Diode External Quantum Efficiency
by: jeng hsin,liou, et al.
Published: (2005) -
InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
by: Ping-Chieh Tsai, et al.
Published: (2005) -
Investigation of InGaN/GaN Light Emitting Diode
by: Chia-Ming Lee, et al.
Published: (2004) -
Investigation of InGaN/GaN Light Emitting Diode
by: Yu-Chuan Liu, et al.
Published: (2004)