A 3.1~10.6 GHz Low Noise Amplifier For Ultra Wideband Systems

• Main Authors: Wei-Guo Huang, 黃偉國
• Other Authors: Jan-Dong Tseng
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/94033382830234043165

碩士 === 國立勤益科技大學 === 電子工程系 === 102 === The paper is based on the TSMC 0.18 CMOS process, and used ADS(Advanced Design System) as simulation tool, to develop 3.1－10.6 GHz ultra-wideband low-noise amplifier. The circuit design consideration is with low power and high gain. Amplifier is designed on the LC high-pass filters architecture which is used for wideband impedance match; cascade architecture is used at the second stage to enhance isolation and gain. A darlington pair is used at the third stage to enhance the high-frequency gain. The measurement shows that the maximum gain is 17.92 dB, -3dB bandwidth is from 3 GHz to 11 GHz, the noise figure is from 1.13 dB to 2.45 dB, S11 is less than -10.5 dB, S12 is less than -30 dB, S22 is less than -12.2 dB, IIP3 is better than -14 dBm, P1dB is -21 dBm, and the total power consumption is 14.76 mW.