Synthesis and Characterization of Transition Metal/Metal Oxide Films from Solution Processes

博士 === 國立交通大學 === 材料科學與工程學系所 === 102 === Thin film materials are widely employed in many industries. In particular, metal and metal oxide thin films have received considerable attentions because they show promising potentials in energy technologies and semiconductor manufacturing. The physical and c...

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Bibliographic Details
Main Authors: Chen, Jing-Yu, 陳境妤
Other Authors: Wu, Pu-Wei
Format: Others
Language:en_US
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/83389219291226711303
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Summary:博士 === 國立交通大學 === 材料科學與工程學系所 === 102 === Thin film materials are widely employed in many industries. In particular, metal and metal oxide thin films have received considerable attentions because they show promising potentials in energy technologies and semiconductor manufacturing. The physical and chemical properties of metals and metal oxides vary greatly and different preparation routes lead to distinct morphology and crystallinity. In the development of novel metal or metal oxide thin films, it is extremely important to characterize the thin films and explore the deposition mechanism. Better understanding of film properties and relevant deposition mechanisms are necessary to promote the further applications. This study mainly focuses on the solution processes, including electroless plating and sol-gel process. We developed new solution compositions, preparing various thin films including ruthenium/ruthenium oxide (Ru/RuO2), iridium oxide (IrO2), and niobium oxide (Nb2O5). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscope (SEM) were employed for thin film characterization. In addition, UV-Vis spectra and X-ray absorption spectroscopy (XAS) were conducted for solution analyses, determining the identity of the metal ion species and their corresponding oxidation states. An amorphous Ru thin film was obtained by electroless plating. The electroless process revealed an oxidative-reductive mechanism, in which the precursor Ru(III) was oxidized to Ru(VIII) first, followed by its subsequent reduction to metallic Ru and Ru(IV). In addition, in developing the IrO2 by electroless plating, the deposit was confirmed as an amorphous IrO2 thin film. And the deposition mechanism was a straightforward oxidation process, which means that the Ir(III) precursor is oxidized to Ir(IV), forming an IrO2 thin film. Furthermore, crystalline Nb2O5 thin film was fabricated by a spin-coating sol-gel process with an annealing treatment. In-situ UV-Vis spectroelectrochemstry was performed to inspect the electrochromic properties of the Nb2O5 thin film. In summary, this study develops electroless formula with new ingredients to deposit metal and metal oxide thin films. Characterization for both electroless solution and deposited film are performed, and the deposition mechanisms are proposed and discussed.