| Summary: | 碩士 === 國立交通大學 === 照明與能源光電研究所 === 102 === Recently, there are a lot of researches and applications about magnetic material. Therefore, to investigate new physical phenomenon, we introduce magnetic material into semiconductor process. FePt is selected since magnetocrystalline anisotropy and saturated magnetization of it is larger than other magnetic materials and chemical stability is better than others. The purpose of this research is to produce build-in magnetic field in the MIM device of nanometer scale by embedding patterned FePt nano-magnets into the device, and to study optimal condition for measurements of magneto-electric coupling effect on current-voltage, capacitance-voltage and capacitance-frequency.
There are two parts in this thesis. First part is the process of MIM structure and the design of arrangement of patterns for FePt nano-magnets. Arrangement of the pattern and magnetizing condition both affect distribution of magnetic field in the space. In the second part we analyze magnetic and electrical characteristics of FePt nano-magnets embedded MIM structure. Magnetization annealing process enhances remanent magnetization and saturated magnetization of device. According to theoretical predictions of Prof. Chun-Yen Chang, reduction of leakage current and higher breakdown field can be obtained since decrease of tunneling probability of electron under magnetic field is observed and reduction of mean free path of electron under magnetic field is also studied. In this research we find the phenomenon is obvious with patterns of large ratio of the length to width.
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