Key Technologies of 3-D ICs for Advanced BSI-CIS Application
碩士 === 國立交通大學 === 電子工程學系 電子研究所 === 102 === Backside illumination CMOS image sensor (BSI-CIS) has many advantages such as reducing the noise beyond low illumination to lighten color distortion, enhancing the sensor current, and lowering the effect of Young's interference. Cu/Sn to Cu/Sn bump wit...
Main Authors: | Lyu, Dian-Rong, 呂典融 |
---|---|
Other Authors: | Chen, Kuan-Neng |
Format: | Others |
Language: | en_US |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/39417694892655714729 |
Similar Items
-
Ultra-Thin Silicon Layer Transfer with Oxide Bonding for BSI-CIS Application
by: Ho, Hsing-Han, et al.
Published: (2012) -
Process Integration and Development of Advanced 3D IC Key Technologies with Temporary Bonding and Bottom-Up TSV Formation
by: Sun, Shimin, et al.
Published: (2014) -
BSI and Industry - The Changing Face of Standards
by: David Woolliscroft
Published: (1995-06-01) -
Applications of BMI or BSI: Differences and Revisions According to Age and Height
by: Otto W. B. Schult, et al.
Published: (2010-01-01) -
Magnetic-Field-Orientation Dependent Magnetoelectric Effect in FeBSiC/PZT/FeBSiC Composites
by: Jun-Xian Ye, et al.
Published: (2014-01-01)