The Study of Non-Polar GaN Directly Grown on Sapphire Substrate by HVPE
碩士 === 國立交通大學 === 電子物理系所 === 102 === In this paper, using hydride vapor phase epitaxy growth of non-polar GaN directly on sapphire substrates, and discussion and analysis of non-polar GaN growth mechanism by changing various parameters, such as carrier gases, temperature epitaxy , environmental pres...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69070154753178124933 |