DC Characteristic Fluctuation of 16-nm-Gate HKMG Bulk FinFET Devices Induced by Random Position of Discrete Dopant and Random Grain of Metal Gate
碩士 === 國立交通大學 === 電信工程研究所 === 102 === Innovation of fabrication process, device, device material, and vertical channel structure benefits the mass production of CMOS devices. It continues to support and energize the performance projection of Moore’s law. Performance improvement of nanometerscaled...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ssv742 |