Simulations of Electrical Characteristics and Energy Transport for High Electron Mobility Transistors
碩士 === 國立交通大學 === 機械工程系所 === 102 === Gallium nitride is suitable for application in high-power microwave, because of its high breakdown voltage, high electron mobility and saturation velocity. In this thesis, SILVACO is used to simulate I-V characteristics of AlGaN/GaN High Electron Mobility Transis...
Main Authors: | Lin, Yu-Feng, 林佑峰 |
---|---|
Other Authors: | Chieng, Wei-Hua |
Format: | Others |
Language: | zh-TW |
Published: |
2013
|
Online Access: | http://ndltd.ncl.edu.tw/handle/48825646644699913676 |
Similar Items
-
The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
by: Yu-Chieh Chen, et al.
Published: (2006) -
The Effect of Buffer Layers on the Electrical Properties of GaAs High Electron Mobility Transistors
by: Yi-Ping Lin, et al.
Published: (2002) -
Simulation for the high frequency high electron mobility transistor (HEMT) design
by: 林以寬
Published: (2014) -
TEM Characterization of Electrically Stressed High Electron Mobility Transistors
Published: (2012) -
Investigation of Non-ideal Characteristics in AlGaN∕ GaN High Electron Mobility Transistors
by: Sheng Yu Liao, et al.
Published: (2013)