Formation of Ge Quantum Dot and Shell for Si on Insulator Applications

碩士 === 國立中央大學 === 電機工程學系 === 102 === This thesis continuously studied the formation of Ge QDs using thermal oxidation of poly-SiGe pillar/Si3N4/Si heterostructure in our lab, and further discussed the dependence of morphology and internal defects of Ge QD between oxidation and annealing conditio...

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Bibliographic Details
Main Authors: Zi-Hao Wu, 吳梓豪
Other Authors: Pei-Wen Li
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/08688797233761845118

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