| Summary: | 碩士 === 國立中央大學 === 機械工程學系 === 102 === Tungsten oxide film under different oxygen flow rates are deposited by DC sputtering. The deposition process is monitored by the Langmuir probe, optical emission spectrometer and mass spectrometer. From the voltage change at target and all plasma parameters, we found low oxygen flow rate (5 sccm) only creates metal-rich tungsten oxides films, while higher oxygen flow rate (10 -20 sccm) assures the deposition of amorphous WO3 films. The analyses for the deposited films by XRD, SEM, EDS, XPS and UV-Vis-NIR spectroscopy and ellipsometry also confirm the above claim. To explore the electrochromic function of WO3 films, we choose films deposited under 10 sccm for electrochemical insertion of ions (Li+) and electrons. The WO3 films successfully demonstrated the switch between color and bleach states by both pontetiostat and cyclic voltammetry. Quantitative evaluation on electrochemical tests indicates that WO3 film with composition close to its stoichiometry is an optimal choice for electrochormic function.
|
|---|
