Investigation the organo-silicon barrier film deposited by magnetron PECVD

• Main Authors: Sheng-Chieh Huang, 黃聖傑
• Other Authors: Yen -Hung Chen
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/44668432124577593881

碩士 === 國立中央大學 === 光電科學與工程學系 === 102 === With the rapid development of technology, consumer electronics products gradually become an indispensable part of people's lives. However, electronics based on the silicon substrate, glass fiber and glass substrates has been difficult to achieve light, thin and low-cost development goals, so the use of thin, flexible, low-cost flexible plastic substrate becomes an ideal develop targets for manufactures. Although the plastic substrate has the advantages such as light-weight, impact-resistant and rapid mass production, but its poor water vapor permeation barrier ability limit its application, therefore promote water vapor barrier film becomes a popular research topics. Silicon oxide film has good transparency and mechanical properties makes it a popular water vapor barrier material, but generally PECVD silicon oxide film coating process such as capacitive coupled PECVD operates at low vacuum environment (10-1 Torr), makes it difficult to match magnetron sputtering process under high vacuum enviroment (10-3 Torr) for continuous operation. Magnetron PECVD using magnetron sputtering gun as PECVD plasma source which makes PECVD process can operate in high vacuum environment (10-3 Torr), however silicon oxide coating by this method may leads to a large number of hydrocarbon content in layer, since the short residence time of monomer in plasma result to a lower degree of monomer fragmentation, thus reduce the effectiveness of the permeation barrier ability of silicon oxide film. In this research, silicon oxide water vapor barrier film on PET substrate deposited by magnetron PECVD in high vacuum environment (10-3 Torr). Although the side effect such as hydrocarbon content and high process temperature by magnetron sputter gun may deteriorate the barrier performance of the silicon oxide film, the improvement of vacuum degree may able to improve the compactness thus lower the WVTR value. Excess oxygen flow can further increase the Si(-O)4 content, but the etching effect by oxygen plasma on PET substrate may destroy the surface flatness then increase possibility of nano-crack by release of internal stress. 100W RF power, 10sccm O2, 0.25g/h HMDSO were applied to deposit a 50-nm-thick film with low WVTR and high transmittance above 90%. WVTR of the film reached the value of 0.139 g/m2/day lower than the best WVTR value, 0.3 g/m2/day, of films deposited by HMDSO using PEVCD process with other plasma source.