| Summary: | 碩士 === 國立彰化師範大學 === 光電科技研究所 === 102 === This thesis mainly discusses regarding blending regio-regular poly(3-hexylthiophene) (P3HT) with polystyrene (PS)、Poly-4-vinylphenol (PVP) and poly(methylmethacrylate) (PMMA) as organic thin film transistors' active layer then investigated the electrical properties. The first, we studied the effects of insulating PS, PVP and PMMA doped P3HT with different content ratio on electrical characteristics ; secondly to explore the impact of high dielectric constant metal oxide layer on device electrical characteristics.
The first part of the insulating polymer blending different and changing the doping ratio of P3HT as the active layer of thin film transistor components. Without blending insulating polymer, the pure P3HT in air ambient show worse electrical performance due to moisture and oxygen. When the P3HT blending PS, PVP, PMMA cause the water-resistant oxide of the element is improved , but the doping ratio is too high, excessive the original molecule maybe cutting off hole conduction path causes the current to decrease affect the electrical characteristics.
The second part of use high dielectric constant metal oxide material (Al2O3) stacked poly(methylmethacrylate) (PMMA) produced low drive voltage organic thin film transistor, successfully operating voltage components down to 1 to -2 V. When doping ratio of P3HT to PMMA was 1:0.5 , cutoff voltage was calculated with a minimum value of -0.1V and highest carrier mobility 0.012 cm2/Vs. The AFM measurements result shows that an appropriate doping amount could improve the crystal quality of the P3HT film, and thus enhance device characteristics.
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