| Summary: | 碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 102 === In these studies, the state-of-the-art two-dimensional device simulation tool, ATLAS, from SILVACO is being evaluated for the purpose of studying light-emitting diodes (LEDs). It predicts the electron behavior of specified semiconductor structures, and provides insight into the internal physical mechanisms associated with device operation.
We designed the active layer area is 300 μm 300 μm for blue InGaN/GaN multiple-quantum well (MQW) light-emitting diodes, using the SILVACO ATLAS tool, the two-dimensional device simulation package ATLAS was used to theoretically analyze physical device characteristic. Other important physical mechanisms and optical properties, such as luminescent power, electroluminescence intensity, energy band, electric field, carrier concentration, and recombination rate were also investigated in this study.
In this thesis, the first chapter, a brief history of the development of light-emitting diodes and motivation. The second chapter introduces the basic principles and characteristics of light-emitting diode materials, and a complete discussion of III-V nitride material properties. The third chapter describes the basic elements of this thesis depth to do a complete discussion of the model equations and theories used when TCAD simulation, the model used to do a complete discussion. Chapter IV simulation to identify InGaN / GaN layers doped concentration parameter optimization. Finally, changes its polarization effect, and analyzed at different polarization effects, the influence of an energy band diagram characteristic change element analysis.
Key words：light-emitting diodes, InGaN, Polarization effects
Author* Yu-Qiu Chen
Advisor** Shiou-Ying Cheng Ph.D.
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