The Termination Design and Process Simulation for High Voltage Super-Junction Device

• Main Authors: Chia-Chen Chien, 簡嘉辰
• Other Authors: Shiou-Ying Cheng
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/jvfs3w

碩士 === 國立宜蘭大學 === 電子工程學系碩士班 === 102 === Due to the power semiconductor devices have developed rapidly, the power semiconductor devices become the key component of modern power electronics technology, and influence the realization and improvement of the device. The material of the traditional silicon in the process is usually used at the power device, because of the silicon limit, that the specific on-resistence is the power of 2.5 with breakdown voltage, so that the breakthrough of “silicon limit” is the frontier topic of research direction. In recent years, a super junction structure is widely used in the power semiconductor devices. The idea of super junction structure on the specific on-resistance had been improved from logarithmic to linear, namely, the doping level in the drift layer can now be increased by at least one order of magnitude without lowering the breakdown voltage. It has been reached that both high breakdown voltage and low specific on-resistance. But the super junction structure is difficult to achieve in terms of process that the doping level and the width both in P and N pillar is equal. This situation will result in the charge in N and P pillar would not compensate and makes the breakdown voltage decreases. The first it will be discussed by diode structure in this paper. In this paper, the first introduction was super junction structure historical background and the basic operating principle, and to point out the advantages and disadvantages of super junction. Then introduce the termination structure of the application of the theory and characteristics, and describe the importance of the terminal structure. Join the termination structure to let the super junction structure have better operating characteristics, and it will improve the the disadvantage of super junction. Then, in the super junction diodes on metal oxide semiconductor field effect transistors do combine, and actually simulate high breakdown voltage in power device. It is worth pointing out that it was the process from the actual of market, and it makes the structure of almost equal through the simulation software. These structure may be discussed the breakdown voltage, the electric field profile, the potential distribution, the boundary of the depletion region and the specific on-resistance etc, and simulate the breakdown voltage is 700V power devices.