Study of Metal Oxide Semiconductor Field Effect Humidity Sensing Device Using Titanium Dioxide Sensing Film with Nitrogen Doping

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 102 === The TiO2:N2 relative humidity sensing devices were accomplished in accordance with semiconductor structures. The optimum growth parameter of TiO2:N2 sensing film was decided to fabricate the well-defined relative humidity sensor. In this study, the optimum...

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Bibliographic Details
Main Authors: HUANG, PO-HAO, 黃柏豪
Other Authors: YANG, CHIH-CHIN
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/3f56bh