Study of Characteristics of Gallium Nitride Light-emitting Diodes with ZnO Rods

• Main Authors: Wang Shi-Ping, 王希平
• Other Authors: Huang Chia-Hong
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/22036305457106423228

碩士 === 國立高雄師範大學 === 電子工程學系 === 102 === Periodic arrangement of zinc oxide (ZnO) rods used as a surface structure of light-emitting diode (LED), the combination of ZnO and GaN enhance the light extraction efficiency of the LED. Research began with using SILVACO to simulate a basic single quantum well InGaN / GaN LED. It can be measured that in a conventional single quantum well LED power spectral density (PSD) is 1.82x10-6 W/cm at the wavelength of 468nm. As we simulate a conventional single quantum well LED with zinc oxide nanorods on GaN, it is observed that Electroluminescence (EL) increases. It is because a periodic array at surface is similar to photonic crystals and a two-dimensional grating. The characteristics of quantum well InGaN / GaN LEDs were explored by means of the nano rod size: a length (100 to 600 nm), a width (10 to 70 nm), and a pitch (170 to 530 nm). After simulation analysis, we found the optimum is a length of 600 nm, a width of 70 nm and a pitch of 170 nm.