Subwavelength structures for Silicon-On-Insulator waveguide Crossing
碩士 === 國立中山大學 === 光電工程學系研究所 === 102 === In this thesis, we try to design a low-loss, low- crosstalk and compact dimension waveguide crossing structure with subwavelength grating structures. 1.We discuss the theory and the application limits of subwavelength grating (SWG) structures. 2.Review SOI w...
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ndltd-TW-102NSYS51240402017-04-23T04:27:02Z http://ndltd.ncl.edu.tw/handle/38643484832457465722 Subwavelength structures for Silicon-On-Insulator waveguide Crossing 次波長光柵結構應用在SOI波導跨接元件設計 Chun-ting Chi 机峻廷 碩士 國立中山大學 光電工程學系研究所 102 In this thesis, we try to design a low-loss, low- crosstalk and compact dimension waveguide crossing structure with subwavelength grating structures. 1.We discuss the theory and the application limits of subwavelength grating (SWG) structures. 2.Review SOI waveguide crossing designs and discuss the strengths and weakness . 3.Design waveguide crossing structure with subwavelength structures. 4.Discuss and analysis the results from 3D FDTD simulation. According to the simulation results, we can get a waveguide crossing structure with 0.13dB loss and crosstalk <-35dB. But the crossing dimension would be limited by the characteristics of SWGs, we need more than 20 period number to get efficient SWGs. The crossing dimension is 12 x 12 μm^2 of our design. Yung-Jui (Ray) Chen 陳永睿 2014 學位論文 ; thesis 79 en_US |
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碩士 === 國立中山大學 === 光電工程學系研究所 === 102 === In this thesis, we try to design a low-loss, low- crosstalk and compact dimension waveguide crossing structure with subwavelength grating structures.
1.We discuss the theory and the application limits of subwavelength grating (SWG) structures.
2.Review SOI waveguide crossing designs and discuss the strengths and weakness .
3.Design waveguide crossing structure with subwavelength structures.
4.Discuss and analysis the results from 3D FDTD simulation.
According to the simulation results, we can get a waveguide crossing structure with 0.13dB loss and crosstalk <-35dB.
But the crossing dimension would be limited by the characteristics of SWGs, we need more than 20 period number to get efficient SWGs. The crossing dimension is 12 x 12 μm^2 of our design.
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Yung-Jui (Ray) Chen |
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Yung-Jui (Ray) Chen Chun-ting Chi 机峻廷 |
author |
Chun-ting Chi 机峻廷 |
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Chun-ting Chi 机峻廷 Subwavelength structures for Silicon-On-Insulator waveguide Crossing |
author_sort |
Chun-ting Chi |
title |
Subwavelength structures for Silicon-On-Insulator waveguide Crossing |
title_short |
Subwavelength structures for Silicon-On-Insulator waveguide Crossing |
title_full |
Subwavelength structures for Silicon-On-Insulator waveguide Crossing |
title_fullStr |
Subwavelength structures for Silicon-On-Insulator waveguide Crossing |
title_full_unstemmed |
Subwavelength structures for Silicon-On-Insulator waveguide Crossing |
title_sort |
subwavelength structures for silicon-on-insulator waveguide crossing |
publishDate |
2014 |
url |
http://ndltd.ncl.edu.tw/handle/38643484832457465722 |
work_keys_str_mv |
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