Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell

碩士 === 國立中山大學 === 電機工程學系研究所 === 102 === In this paper, we propose a series of amorphous silicon (a-Si) and amorphous silicon germanium (a-SiGe) heterojunction solar cells. The a-SiGe is inserted into the different junction of the conventional planar a-Si PIN solar cells thus the new different struc...

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Main Authors: Min-yan Lin, 林旻彥
Other Authors: Jyi-Tsong Lin
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/644597
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spelling ndltd-TW-102NSYS54420912019-05-15T21:32:37Z http://ndltd.ncl.edu.tw/handle/644597 Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell 新穎高轉換效率薄膜異質接面太陽能電池之最佳化設計 Min-yan Lin 林旻彥 碩士 國立中山大學 電機工程學系研究所 102 In this paper, we propose a series of amorphous silicon (a-Si) and amorphous silicon germanium (a-SiGe) heterojunction solar cells. The a-SiGe is inserted into the different junction of the conventional planar a-Si PIN solar cells thus the new different structures of solar cell,「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / n-a-Si:H」、「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / n-a-Si:H」、「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」and 「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / i3-a-Si:H / n-a-Si:H」 are formed. Concerning that the conventional a-Si:H p-i-n structure has the high energy gap (1.7~1.9 eV) and high absorption coefficient,, the absorption layer thickness thus can be reduced for further reducing the cost. However, the high energy gap of a-Si:H cannot absorb long-wavelength of light so that the power conversion efficiency cannot be improved. In order to increase the long-wavelength absorption, we insert one or two layers of a-SiGe absorption layers into the conventional PIN counterpart due to the narrow energy gap (1.1~1.7 eV) of a-SiGe. The long-wavelength light can thus be more effectively absorbed and generate more carriers to increase the short-circuit current density (JSC). Therefore, the power conversion efficiency can be enhanced dramatically. The new designed a-Si/a-SiGe heterojunction solar cells improve short current density much significantly than conventional amorphous silicon solar cells do. Moreover, the power conversion efficiency of the new designed a-Si/a-SiGe solar cell is 16.29 %, which is achieved for the thin film solar cell up to now. Furthermore, for the purpose of enhancing the power conversion efficiency, we combine the 「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」 structure and the pillared array structure to optimize the design by using TCAD software. The results indicate that under the same solar cell structure, the pillared array structure has a higher power conversion efficiency which is 4.76 % more than that of the planar structure stated above. Jyi-Tsong Lin 林吉聰 2014 學位論文 ; thesis 100 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中山大學 === 電機工程學系研究所 === 102 === In this paper, we propose a series of amorphous silicon (a-Si) and amorphous silicon germanium (a-SiGe) heterojunction solar cells. The a-SiGe is inserted into the different junction of the conventional planar a-Si PIN solar cells thus the new different structures of solar cell,「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / n-a-Si:H」、「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / n-a-Si:H」、「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」and 「p-a-Si:H / i1-a-Si:H / i2-a-SiGe / i3-a-Si:H / n-a-Si:H」 are formed. Concerning that the conventional a-Si:H p-i-n structure has the high energy gap (1.7~1.9 eV) and high absorption coefficient,, the absorption layer thickness thus can be reduced for further reducing the cost. However, the high energy gap of a-Si:H cannot absorb long-wavelength of light so that the power conversion efficiency cannot be improved. In order to increase the long-wavelength absorption, we insert one or two layers of a-SiGe absorption layers into the conventional PIN counterpart due to the narrow energy gap (1.1~1.7 eV) of a-SiGe. The long-wavelength light can thus be more effectively absorbed and generate more carriers to increase the short-circuit current density (JSC). Therefore, the power conversion efficiency can be enhanced dramatically. The new designed a-Si/a-SiGe heterojunction solar cells improve short current density much significantly than conventional amorphous silicon solar cells do. Moreover, the power conversion efficiency of the new designed a-Si/a-SiGe solar cell is 16.29 %, which is achieved for the thin film solar cell up to now. Furthermore, for the purpose of enhancing the power conversion efficiency, we combine the 「p-a-Si:H / i1-a-SiGe / i2-a-Si:H / i3-a-SiGe / n-a-Si:H」 structure and the pillared array structure to optimize the design by using TCAD software. The results indicate that under the same solar cell structure, the pillared array structure has a higher power conversion efficiency which is 4.76 % more than that of the planar structure stated above.
author2 Jyi-Tsong Lin
author_facet Jyi-Tsong Lin
Min-yan Lin
林旻彥
author Min-yan Lin
林旻彥
spellingShingle Min-yan Lin
林旻彥
Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell
author_sort Min-yan Lin
title Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell
title_short Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell
title_full Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell
title_fullStr Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell
title_full_unstemmed Optimized Design of Novel High Conversion Efficiency Thin Film Heterojunction Solar Cell
title_sort optimized design of novel high conversion efficiency thin film heterojunction solar cell
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/644597
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