Study of Rare-Earth Oxide as the Gate Dielectric for Si MOSFETs and Ge MOS Capacitors
碩士 === 國立清華大學 === 工程與系統科學系 === 102 === In order to cater to the current direction of development of CMOS devices, in this paper, we propose two possible ways to improve device performance. In the first topic, we use rare earth oxides Yb2O3 combine with high dielectric constant crystalline materials...
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| Format: | Others |
| Language: | zh-TW |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/90969813486049177749 |