Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers
碩士 === 國立臺灣師範大學 === 機電科技學系 === 102 === Thermoelectric materials featuring the advantage of energy interconvertibility between heat and electrical energy shows a great potential on the application of waste heat recovery. However, the element inter-diffusion between thermoelectric materials and electr...
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ndltd-TW-102NTNU56570142016-03-09T04:34:33Z http://ndltd.ncl.edu.tw/handle/72437558502130804233 Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers 碲化鉛熱電塊材與銅電極間填料接合之擴散阻障效應及界面性質研究 Yu-Shiang Ke 柯鈺翔 碩士 國立臺灣師範大學 機電科技學系 102 Thermoelectric materials featuring the advantage of energy interconvertibility between heat and electrical energy shows a great potential on the application of waste heat recovery. However, the element inter-diffusion between thermoelectric materials and electrode during bonding process is a major challenge for module production. In this study, Ni diffusion barrier was deposited by electroplating on intermediate-temperature PbTe and PbAgTe thermoelectric materials to prevent the element diffusion. The bonding process for SnAgTi filler and copper electrode was carried out at 400℃ for 20 minutes under vacuum with a pressure of 2×10-2 torr. On the other hand, the high-temperature AgCuTi filler was also used for the investigation of solid-state diffusion bonding at a high temperature of 580℃for 1 hour under vacuum. Finally, the bonding samples were evaluated by short-time aging test and electrical measurement over the temperature range from 300℃ to 550℃. The cross-sectional structure was observed by scanning electron microscope. The experimental results demonstrate that the stack of PbTe/Ni/SnAgTi/Cu and PbAgTe/Ni/SnAgTi/Cu can be successfully bonded below 450℃. These samples with appropriated bonding conditions also maintain good bonding stability at an ageing temperature of 300℃ for 30 minutes. Another bonding stack of PbTe/Ni/AgCuTi/Cu even obtained a well-bonded interface with increasing aging temperature up to 500℃ for 30 minutes. Besides, it is worth to note that the interface resistance for the bonding structure of PbTe/Ni/SnAgTi/Cu and PbAgTe/Ni/SnAgTi/Cu raised with increasing aging temperature. On the contrary, the PbTe/Ni/AgCuTi/Cu structure based on diffusion bonding approach shows a reverse trend that was evident in a lowered interface resistance with relevant increase in aging temperature. Chin-Pao Cheng Chun-Hu Cheng 程金保 鄭淳護 2014 學位論文 ; thesis 98 zh-TW |
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碩士 === 國立臺灣師範大學 === 機電科技學系 === 102 === Thermoelectric materials featuring the advantage of energy interconvertibility between heat and electrical energy shows a great potential on the application of waste heat recovery. However, the element inter-diffusion between thermoelectric materials and electrode during bonding process is a major challenge for module production. In this study, Ni diffusion barrier was deposited by electroplating on intermediate-temperature PbTe and PbAgTe thermoelectric materials to prevent the element diffusion. The bonding process for SnAgTi filler and copper electrode was carried out at 400℃ for 20 minutes under vacuum with a pressure of 2×10-2 torr. On the other hand, the high-temperature AgCuTi filler was also used for the investigation of solid-state diffusion bonding at a high temperature of 580℃for 1 hour under vacuum. Finally, the bonding samples were evaluated by short-time aging test and electrical measurement over the temperature range from 300℃ to 550℃. The cross-sectional structure was observed by scanning electron microscope.
The experimental results demonstrate that the stack of PbTe/Ni/SnAgTi/Cu and PbAgTe/Ni/SnAgTi/Cu can be successfully bonded below 450℃. These samples with appropriated bonding conditions also maintain good bonding stability at an ageing temperature of 300℃ for 30 minutes. Another bonding stack of PbTe/Ni/AgCuTi/Cu even obtained a well-bonded interface with increasing aging temperature up to 500℃ for 30 minutes. Besides, it is worth to note that the interface resistance for the bonding structure of PbTe/Ni/SnAgTi/Cu and PbAgTe/Ni/SnAgTi/Cu raised with increasing aging temperature. On the contrary, the PbTe/Ni/AgCuTi/Cu structure based on diffusion bonding approach shows a reverse trend that was evident in a lowered interface resistance with relevant increase in aging temperature.
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author2 |
Chin-Pao Cheng |
author_facet |
Chin-Pao Cheng Yu-Shiang Ke 柯鈺翔 |
author |
Yu-Shiang Ke 柯鈺翔 |
spellingShingle |
Yu-Shiang Ke 柯鈺翔 Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers |
author_sort |
Yu-Shiang Ke |
title |
Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers |
title_short |
Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers |
title_full |
Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers |
title_fullStr |
Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers |
title_full_unstemmed |
Diffusion barrier effect and interface property investigation on PbTe thermoelectric bulk and Cu electrode bonding by metal fillers |
title_sort |
diffusion barrier effect and interface property investigation on pbte thermoelectric bulk and cu electrode bonding by metal fillers |
publishDate |
2014 |
url |
http://ndltd.ncl.edu.tw/handle/72437558502130804233 |
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