Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy

碩士 === 國立臺灣大學 === 電子工程學研究所 === 102 === In this thesis, the optical and structural properties of InAs nanowires grown by GSMBE have been investigated by μ-Raman spectroscopy. To begin with, the single nanowire signal detection is achieved, and we observed the LO, TO and SO modes of InAs, which are an...

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Main Authors: Chia-Hao Hsu, 許家豪
Other Authors: Hao-Hsiung Lin
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/46896553096374876040
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spelling ndltd-TW-102NTU054280852016-03-09T04:24:20Z http://ndltd.ncl.edu.tw/handle/46896553096374876040 Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy 以顯微拉曼光譜探悉砷化銦奈米線之晶格動力學 Chia-Hao Hsu 許家豪 碩士 國立臺灣大學 電子工程學研究所 102 In this thesis, the optical and structural properties of InAs nanowires grown by GSMBE have been investigated by μ-Raman spectroscopy. To begin with, the single nanowire signal detection is achieved, and we observed the LO, TO and SO modes of InAs, which are analyzable. Secondly, we discovered that the optical modes of NWs are red-shifted compared with bulk counterparts, and the selection rules are different too. The possibility of laser heating is eliminated via power-variant measurement, in which we haven’t observed mode shifting. By performing measurements in different configurations, we attribute the 3~4 cm-1 redshift of TO mode under X(YY)X to the appearance of E2 mode of Wurzite structure caused by stacking variance in NW. The Wurzite-B1 mode, induced by lattice disorder, is also observed under X(ZZ)X &; X(YZ)X. In addition, the blue-shifting of Raman modes after RTA is observed for the first time, and the phenomena is corresponded to the relaxation of interfacial strain between ZB&;WZ structures. The redshift caused by interfacial strain is about 2 cm-1 for both TO &; LO modes. Hao-Hsiung Lin 林浩雄 2014 學位論文 ; thesis 81 zh-TW
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language zh-TW
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description 碩士 === 國立臺灣大學 === 電子工程學研究所 === 102 === In this thesis, the optical and structural properties of InAs nanowires grown by GSMBE have been investigated by μ-Raman spectroscopy. To begin with, the single nanowire signal detection is achieved, and we observed the LO, TO and SO modes of InAs, which are analyzable. Secondly, we discovered that the optical modes of NWs are red-shifted compared with bulk counterparts, and the selection rules are different too. The possibility of laser heating is eliminated via power-variant measurement, in which we haven’t observed mode shifting. By performing measurements in different configurations, we attribute the 3~4 cm-1 redshift of TO mode under X(YY)X to the appearance of E2 mode of Wurzite structure caused by stacking variance in NW. The Wurzite-B1 mode, induced by lattice disorder, is also observed under X(ZZ)X &; X(YZ)X. In addition, the blue-shifting of Raman modes after RTA is observed for the first time, and the phenomena is corresponded to the relaxation of interfacial strain between ZB&;WZ structures. The redshift caused by interfacial strain is about 2 cm-1 for both TO &; LO modes.
author2 Hao-Hsiung Lin
author_facet Hao-Hsiung Lin
Chia-Hao Hsu
許家豪
author Chia-Hao Hsu
許家豪
spellingShingle Chia-Hao Hsu
許家豪
Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy
author_sort Chia-Hao Hsu
title Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy
title_short Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy
title_full Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy
title_fullStr Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy
title_full_unstemmed Lattice Dynamics Investigation of InAs Nanowires by Micro Raman Spectroscopy
title_sort lattice dynamics investigation of inas nanowires by micro raman spectroscopy
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/46896553096374876040
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