Study of phase separation and twin defect in (111) GaAsSb by X-ray diffraction
碩士 === 國立臺灣大學 === 電子工程學研究所 === 102 === Previous researches observed dual peaks in (1 1 1) GaAsSb using (3 3 3) and (1 1 1) ω-2θ HRXRD scans, and claimed it as phase separation. After that a research found existence of twinning in (1 1 1) GaAsSb by using TEM. Because twin could possibly result in dua...
Main Authors: | Yi-Heng Lin, 林奕亨 |
---|---|
Other Authors: | Hao-Hsiung Lin |
Format: | Others |
Language: | zh-TW |
Published: |
2014
|
Online Access: | http://ndltd.ncl.edu.tw/handle/37405053261316442590 |
Similar Items
-
Growth mechanism of twin defects in (111)B GaAsSb studied by X-ray diffraction spectroscopy
by: Shih-Chang Chen, et al.
Published: (2015) -
Organometallic vapor phase epitaxy of GaAsSb and GaAsSb/AlAsSb distributed bragg reflector
by: HUANG, PEI-LIN, et al.
Published: (1993) -
Optical characterization of GaAsSb/GaAs and GaAsSb/GaAsP strained quantum wells
by: Guan-fu Liu, et al.
Published: (2011) -
Study of structural properties and characterization of (100) and (111) GaAsSb/GaAs grown by molecular beam epitaxy
by: Yi-Ren Chen, et al.
Published: (2012) -
The Optical Characterization of GaAsSb/GaAsP and GaAsSb/GaAs/GaAsP Strain Compensated Quantum Well Structures
by: Chen-Tai Huang, et al.
Published: (2011)