Improvement and Investigation on Stability of Flexible Organic Thin-Film Transistors under Bending Stress

• Main Authors: Jung-Chuan Chiou, 邱榮全
• Other Authors: Ching-Lin Fan
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/x56meg

碩士 === 國立臺灣科技大學 === 電子工程系 === 102 === Organic semiconductors and polymer dielectrics with plastic substrate recently have been an emerging technology for flexible electronic devices, such as organic thin-film transistors (OTFT). Organic thin-film transistors have the advantages of mechanical properties, low temperature processing, low cost, and large area capability and so have various potential applications such as paper-like displays, radio frequency identification tags, e-textiles, and large area sensors. In our study, we investigated the transistors’ behavior during bending states, and not just only before and after bending. First, we established a standard manufacturing process of organic thin-film transistors, and chose thickness 125 μm and 25 μm polyimide for our flexible devices’ substrate to examine the electrical characteristics during the same bending radius of 4 mm. Next, we compared the uniformity of characteristics for the devices fabricated on 25 μm polyimide substrate with several bending radii of 4, 3, 2, and 1 mm. Eventually, the devices have stored separately in different environments, vacuum and atmosphere, with a long-term bending state to observe the variations in performance. The experiment results indicate that thinner substrate could perform more excellent characteristics of OTFT with the same bending radius than that of thicker one, and better durability for smaller bending radii. While the device was in a long-term bending state in the vacuum, the performance wouldn’t deteriorate with time; however, when the device was placed in the air, the mechanical bending would accelerate the degradation of the electrical characteristics.