| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 102 === First, in this thesis the injection signal is fed to a pre-amplifier to enhance the injection signal at the mixer gate in the divide-by-2 ILFD. The gate of mixer is biased in sub-threshold or off-state region to provide large output voltage. Measurement results show that at the supply voltage of 0.85 V, the free-running frequency is from 3.23 to 3.59 GHz for the high-frequency band and from 1.71 to 1.73 GHz for the low-frequency band. An external injected signal power of 0 dBm provides a low-band divide-by-2 locking range (61.7％) from 2.8 to 5.3GHz and a high-band locking range (64.9％) from 5.1~10.0GHz.
Secondly, by exploiting a left-handed and a right-handed LC resonator, a triple-band (TB) oscillator is designed. The TB oscillator consists of a pair of cross-coupled nMOSFETs and two pairs of back-to-back varactors for both band switching and frequency tuning. The proposed oscillator has been implemented with the TSMC 0.18μm SiGe 3P6M BiCMOS technology and the core power consumption of the high (middle, low)- band core oscillator is 1.8(1.86, 2.06) mW, at the dc drain-source bias of 0.8 V. The oscillator can generate differential signals in the frequency range of 8.44-8.71GHz, 6.74-6.86GHz, and 4.22-4.47 GHz. The die area of the triple-band oscillator is 1.045 × 1.064 mm2.
Finally, a triple-band (TB) oscillator with a varactor and MOS-mode switching is designed. The VCO uses a pair of varactors used for frequency tuning. The proposed oscillator has been implemented with the TSMC 0.18 μm 1P6M CMOS technology and the core power consumption of the high (middle, low)- band core oscillator is 3.87(4.03,3.95) mA and 3.28(3.42, 3.35) mW, respectively at the dc drain-source bias of 0.85 V. The VCO can generate differential signals in the frequency range of 7.17~7.32GHz, 4.58~5.76GHz, and 3.49~3.75 GHz. The die area of the triple-band VCO is 1.067× 0.766 mm2.
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