Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire
碩士 === 國立臺灣科技大學 === 機械工程系 === 102 === Since ancient times, polishing has been a process critical to bronze mirrors, jade and jewelry grinding until modern wafer planarization in semiconductor industry’s. However, mechanical polishing has certain limitation, the chemical mechanical planarization (CMP...
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ndltd-TW-102NTUS54890872016-03-09T04:30:58Z http://ndltd.ncl.edu.tw/handle/32497829840515040968 Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire 單晶矽與藍寶石晶圓化學機械平坦化之拋光墊有效壽命指標分析研究 Chan-Ju Wen 溫禪儒 碩士 國立臺灣科技大學 機械工程系 102 Since ancient times, polishing has been a process critical to bronze mirrors, jade and jewelry grinding until modern wafer planarization in semiconductor industry’s. However, mechanical polishing has certain limitation, the chemical mechanical planarization (CMP) is a key technology available to achieve global flatness and local sub-nanometer surface roughness. Polishing pad and slurry are major accessories in CMP process. Currently, the quality of wafer or process time is cred to assess the replacement time of polishing pad. In this study, a confocal laser measuring machine of bearing area ratio (BAR) is used to measure the major work layer of polishing pad and an pad effective lifetime can be obtained by observing the influence of depth of pad groove in wafer planarization process by long time polishing of sapphire and silicon wafers. When the groove depth of pad is down to about 220 μm, the removal rate is less than 50% for both wafers. In this study, the initial groove depth and the remaining groove depth ratio on polishing pad is defined as an index of pad effective lifetime index (PELI). Thus the pad needs to be replaced when the PELI value is down to 0.5. The PELI can be used as a reference index for users to assess the timing of replacing polishing pad. Chao-Chang Chen 陳炤彰 2014 學位論文 ; thesis 213 zh-TW |
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碩士 === 國立臺灣科技大學 === 機械工程系 === 102 === Since ancient times, polishing has been a process critical to bronze mirrors, jade and jewelry grinding until modern wafer planarization in semiconductor industry’s. However, mechanical polishing has certain limitation, the chemical mechanical planarization (CMP) is a key technology available to achieve global flatness and local sub-nanometer surface roughness. Polishing pad and slurry are major accessories in CMP process. Currently, the quality of wafer or process time is cred to assess the replacement time of polishing pad. In this study, a confocal laser measuring machine of bearing area ratio (BAR) is used to measure the major work layer of polishing pad and an pad effective lifetime can be obtained by observing the influence of depth of pad groove in wafer planarization process by long time polishing of sapphire and silicon wafers. When the groove depth of pad is down to about 220 μm, the removal rate is less than 50% for both wafers. In this study, the initial groove depth and the remaining groove depth ratio on polishing pad is defined as an index of pad effective lifetime index (PELI). Thus the pad needs to be replaced when the PELI value is down to 0.5. The PELI can be used as a reference index for users to assess the timing of replacing polishing pad.
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Chao-Chang Chen |
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Chao-Chang Chen Chan-Ju Wen 溫禪儒 |
author |
Chan-Ju Wen 溫禪儒 |
spellingShingle |
Chan-Ju Wen 溫禪儒 Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire |
author_sort |
Chan-Ju Wen |
title |
Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire |
title_short |
Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire |
title_full |
Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire |
title_fullStr |
Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire |
title_full_unstemmed |
Analysis on Effective Lifetime Index of Polishing Pad for CMP Process of Monocrystalline Silicon Wafers and Sapphire |
title_sort |
analysis on effective lifetime index of polishing pad for cmp process of monocrystalline silicon wafers and sapphire |
publishDate |
2014 |
url |
http://ndltd.ncl.edu.tw/handle/32497829840515040968 |
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