Carrier Concentration Study of Bismuth Doped Zinc Oxide Films by Mist Chemical Vapor Deposition

• Main Authors: Yu-hsuan Huang, 黃郁琁
• Other Authors: Wen-How Lan
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/n4tkyc

碩士 === 國立高雄大學 === 電機工程學系碩士班 === 102 === In this thesis, we deposit the bismuth-doped zinc oxide thin film on c-sapphire substrates and n-Si substrates by mist chemical vapor deposition. The bismuth doping on the structural, electrical, optical and stability properties in thin films with different substrates were investigated. The p-type bismuth-doped ZnO with [Bi]/[Zn]=3 at.%, the carrier concentration of 2.8×1017cm-3 can be achieved on c-sapphire substrate. And the p-type bismuth-doped ZnO with [Bi]/[Zn]=0.5 at.%, the carrier concentration of 1.3×1017cm-3 can be achieved on n-Si substrate. With the doping ratio increases by increasing the bismuth concentration enhancement, film morphology and film quality varies. In the study of hole concentration, the In,Bi co-doping technique was used. Different substrates and the doping ratios of indium were applied for thin films study.