Electrical bistability of silver nanoparticles embedded in polymer thin films

• Main Authors: Jheng-Wei,Lai, 賴正偉
• Other Authors: Yi-Sheng Lai
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/17939183903734591371

碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 102 === In this study, poly(N-vinylcarbazole) (PVK) films and polystyrene (PS) films, are used as active layer in resistance random access memory (RRAM), respectively. The active layer, without or with adding different amounts of Ag nanoparticles (2 wt%, 4 wt%, 6 wt%, 8 wt%, and 10 wt%), are sandwiched between aluminum top and bottom electrode to form a metal/insulator/metal (M/I/M) structure. The results suggest that the set voltage (Vset) and the reset voltage (Vreset) of PVK and PS films do not show much dependence on the amount of Ag nanoparticles. The probability of successful switching is about 75% for PVK films with or without Ag nanoparticles. On the other hand, the probability of successful switching is only 35% for PS films. The probability increases to 75% when the PS film is embedded with 2 wt% Ag nanoparticles. However, further increasing the content of Ag nanoparticles from 4 wt% to 10 wt% will decrease the probability. Regarding the conduction mechanism, both of the PVK and PS films in the low resistance state (LRS) are dominated by ohmic conduction. In the high resistance state (HRS), two types of conduction mechanisms have been observed. For the PVK and PS films, either without or with adding 2 wt% Ag nanoparticles, the dominant mechanism shows Schottky emission at the low- and high-electrical field. When the content of Ag nanoparticles increases from 4 wt% to 10 wt%, the ohmic conduction becomes dominated in the low-electrical field whereas the Schottky conduction remains dominated in the high-electrical field.